AON7220 25v n-channel mosfet general description product summary v ds i d (at v gs =10v) 50a r ds(on) (at v gs =10v) < 3m w r ds(on) (at v gs = 4.5v) < 4m w 100% uis tested 100% r g tested symbol v ds the AON7220 uses trench mosfet technology that is uniquely optimized to provide the most efficient hi gh frequency switching performance.power losses are minimized due to an extremely low combination of r ds(on) and crss.in addition,switching behavior is well controlled with a "schottky style" soft recovery bo dy diode. v maximum units parameter absolute maximum ratings t a =25c unless otherwise noted 25v drain-source voltage 25 g ds top view 12 3 4 8 76 5 dfn 3.3x3.3 top view bottom view pin 1 v ds v gs i dm i as , i ar e as , e ar t j , t stg symbol t 10s steady-state steady-state r q jc t c =25c 6.2 33 t c =100c junction and storage temperature range -55 to 150 power dissipation b p d units maximum junction-to-ambient a c/w r q ja 16 45 parameter typ max 20 v 12 gate-source voltage avalanche energy l=0.1mh c mj avalanche current c 30 c thermal characteristics v drain-source voltage 25 t a =70c 311 pulsed drain current c continuous drain current g continuous drain current i d 50 39 t c =25c t c =100c a 48 a t a =25c i dsm a 115 37 w power dissipation a p dsm w t a =70c 83 4 t a =25c maximum junction-to-case c/w c/w maximum junction-to-ambient a d 1.1 55 1.5 g ds top view 12 3 4 8 76 5 dfn 3.3x3.3 top view bottom view pin 1 rev 0: march 2011 www.aosmd.com page 1 of 6
AON7220 symbol min typ max units bv dss 25 v v ds =25v, v gs =0v 1 t j =55c 5 i gss 100 na v gs(th) gate threshold voltage 0.7 1.3 1.8 v i d(on) 311 a 2.5 3 t j =125c 3.5 4.2 3.2 4 g fs 160 s v sd 0.66 1 v i s 50 a c iss 2368 2961 3554 pf c oss 686 981 1276 pf c rss 19 66 113 pf r g 0.3 0.67 1.0 w q g (10v) 34 42.8 52 nc q g (4.5v) 12 17.4 23 nc q gs 6 nc q gd 3.6 nc t d(on) 7.8 ns t 2.5 ns maximum body-diode continuous current g input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time total gate charge v gs =10v, v ds =12.5v, i d =20a gate source charge gate drain charge i s =1a,v gs =0v v ds =5v, i d =20a v gs =10v, i d =20a v gs =4.5v, i d =18a forward transconductance diode forward voltage on state drain current zero gate voltage drain current gate-body leakage current m w r ds(on) static drain-source on-resistance i dss i d =250 m a, v gs =0v v gs =10v, v ds =5v electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions m a v ds =v gs i d =250 m a v ds =0v, v gs = 12v drain-source breakdown voltage reverse transfer capacitance v gs =0v, v ds =12.5v, f=1mhz switching parameters total gate charge v =10v, v =12.5v, gate resistance v gs =0v, v ds =0v, f=1mhz t r 2.5 ns t d(off) 37.8 ns t f 3.8 ns t rr 14 18.1 22 ns q rr 31 39.2 47 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. turn-on rise time body diode reverse recovery charge i f =20a, di/dt=500a/ m s turn-off delaytime i f =20a, di/dt=500a/ m s body diode reverse recovery time v gs =10v, v ds =12.5v, r l =0.625 w , r gen =3 w turn-off fall time a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the power dissipation p dsm is based on r q ja t 10s value and the maximum allowed junction tempera ture of 150 c. the value in any given application depends on the user's specific board de sign, and the maximum temperature of 150 c may be used if the pcb allows it. b. the power dissipation p d is based on t j(max) =150 c, using junction-to-case thermal resistance, and i s more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c. repetitive rating, pulse width limited by juncti on temperature t j(max) =150 c. ratings are based on low frequency and duty cycl es to keep initial t j =25 c. d. the r q ja is the sum of the thermal impedence from junction t o case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150 c. the soa curve provides a single pulse rating. g. the maximum current rating is package limited. h. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. rev 0: march 2011 www.aosmd.com page 2 of 6
AON7220 typical electrical and thermal characteristics 17 52 10 0 18 0 20 40 60 80 100 0 1 2 3 4 5 6 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 0 2 4 6 8 0 5 10 15 20 25 30 r ds(on) (m w ww w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 0.8 1.0 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 200 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =4.5v i d =18a v gs =10v i d =20a 25 c 125 c v ds =5v v gs =4.5v v gs =10v 0 20 40 60 80 100 0 1 2 3 4 5 6 i d (a) v ds (volts) fig 1: on-region characteristics (note e) v gs =2.5v 3.5v 10v 4.5v 4.0v 3v 40 0 20 40 60 80 100 0 1 2 3 4 5 6 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 0 2 4 6 8 0 5 10 15 20 25 30 r ds(on) (m w ww w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c 0.8 1.0 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 200 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =4.5v i d =18a v gs =10v i d =20a 0 2 4 6 8 10 12 2 4 6 8 10 r ds(on) (m w ww w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) 25 c 125 c v ds =5v v gs =4.5v v gs =10v i d =20a 25 c 125 c 0 20 40 60 80 100 0 1 2 3 4 5 6 i d (a) v ds (volts) fig 1: on-region characteristics (note e) v gs =2.5v 3.5v 10v 4.5v 4.0v 3v rev 0: march 2011 www.aosmd.com page 3 of 6
AON7220 typical electrical and thermal characteristics 17 52 10 0 18 0 2 4 6 8 10 0 5 10 15 20 25 30 35 40 45 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 500 1000 1500 2000 2500 3000 3500 0 5 10 15 20 25 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss 0 200 400 600 800 1000 0.0001 0.001 0.01 0.1 1 10 power (w) pulse width (s) figure 10: single pulse power rating junction-to- case (note f) c oss c rss v ds =12.5v i d =20a t j(max) =150 c t c =25 c 10 m s 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 i d (amps) v ds (volts) figure 9: maximum forward biased safe operating area (note f) 10 m s 10ms 1ms dc r ds(on) limited t j(max) =150 c t c =25 c 100 m s 40 0 2 4 6 8 10 0 5 10 15 20 25 30 35 40 45 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 500 1000 1500 2000 2500 3000 3500 0 5 10 15 20 25 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss 0 200 400 600 800 1000 0.0001 0.001 0.01 0.1 1 10 power (w) pulse width (s) figure 10: single pulse power rating junction-to- case (note f) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 z q qq q jc normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) c oss c rss v ds =12.5v i d =20a single pulse d=t on /t t j,pk =t c +p dm .z q jc .r q jc t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150 c t c =25 c 10 m s 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 i d (amps) v ds (volts) figure 9: maximum forward biased safe operating area (note f) 10 m s 10ms 1ms dc r ds(on) limited t j(max) =150 c t c =25 c 100 m s r q jc =1.5 c/w rev 0: march 2011 www.aosmd.com page 4 of 6
AON7220 typical electrical and thermal characteristics 17 52 10 0 18 0 20 40 60 80 100 0 25 50 75 100 125 150 power dissipation (w) t case ( c) figure 13: power de-rating (note f) 0 10 20 30 40 50 60 0 25 50 75 100 125 150 current rating i d (a) t case ( c) figure 14: current de-rating (note f) 1 10 100 1000 10000 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 15: single pulse power rating junction-to- ambient (note h) t a =25 c 1.0 10.0 100.0 1000.0 1 10 100 1000 i ar (a) peak avalanche current time in avalanche, t a ( m mm m s) figure 12: single pulse avalanche capability (note c) t a =25 c t a =150 c t a =100 c t a =125 c 40 0.0001 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 100 1000 z q qq q ja normalized transient thermal resistance pulse width (s) figure 16: normalized maximum transient thermal imp edance (note h) single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0 20 40 60 80 100 0 25 50 75 100 125 150 power dissipation (w) t case ( c) figure 13: power de-rating (note f) 0 10 20 30 40 50 60 0 25 50 75 100 125 150 current rating i d (a) t case ( c) figure 14: current de-rating (note f) 1 10 100 1000 10000 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 15: single pulse power rating junction-to- ambient (note h) t a =25 c r q ja =55 c/w 1.0 10.0 100.0 1000.0 1 10 100 1000 i ar (a) peak avalanche current time in avalanche, t a ( m mm m s) figure 12: single pulse avalanche capability (note c) t a =25 c t a =150 c t a =100 c t a =125 c rev 0: march 2011 www.aosmd.com page 5 of 6
AON7220 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off id + l vgs vds bv unclamped inductive switching (uis) test circuit & waveforms vds dss 2 e = 1/2 li ar ar - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt ar ar t rr rev 0: march 2011 www.aosmd.com page 6 of 6
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